THE IMPURITY RESISTIVITY OF IN-DOPED CDSFERREIRA DA SILVA A.1980; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1980; VOL. 13; NO 16; PP. L427-L431; BIBL. 18 REF.Article

GENERALIZED MATSUBARA-TOYOZAWA THEORY FOR THE SPECIFIC HEAT IN HEAVILY-PHOSPHORUS-DOPED SILICONCHAO KA; FERREIRA DA SILVA A.1979; PHYS. REV., B; USA; DA. 1979; VOL. 19; NO 8; PP. 4125-4129; BIBL. 27 REF.Article

MATRIX ELEMENT IN THE MATSUBARA-TOYOZAWA THEORY OF IMPURITY BANDCHAO KA; FERREIRA DA SILVA A.1978; PHYS. STATUS SOLIDI, B; DDR; DA. 1978; VOL. 90; NO 2; PP. K153-K155; BIBL. 8 REF.Article

ELECTRON HOPPING ENERGY INFLUENCE ON THE SPECIFIC HEAT OF PHOSPHORUS-DOPED SILICONFERREIRA DA SILVA A; FABBRI M; DA CUNHA LIMA IC et al.1983; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1983; VOL. 115; NO 1; PP. 311-316; ABS. GER; BIBL. 13 REF.Article

DIAGONAL AND OFF-DIAGONAL DISORDER IN DOPED SEMICONDUCTORSDA CUNHA LIMA IC; FABBRI M; FERREIRA DA SILVA A et al.1982; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1982; VOL. 111; NO 2; PP. K69-K74; BIBL. 11 REF.Article

Impurity states in a quantum-well wire of GaAs-Ga_1-xAl_xAsFERREIRA DA SILVA, A.Physical review. B, Condensed matter. 1990, Vol 41, Num 3, pp 1684-1686, issn 0163-1829Article

Impurity conductivities in compensated semiconductor systemsFERREIRA DA SILVA, A.Physical review. B, Condensed matter. 1993, Vol 48, Num 3, pp 1921-1923, issn 0163-1829Article

Metal-insulator transitions in doped silicon and germaniumFERREIRA DA SILVA, A.Physical review. B, Condensed matter. 1988, Vol 37, Num 9, pp 4799-4800, issn 0163-1829Article

ELECTRIC CONDUCTION IN N-TYPE GERMANIUM AND CADMIUM SULFIDEFERREIRA DA SILVA A; DA CUNHA LIMA IC; FABBRI M et al.1981; PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1981; VOL. 83; NO 9; PP. 463-468; BIBL. 20 REF.Article

HUBBARD MODEL FOR DISORDERED SYSTEMS: APPLICATION TO THE SPECIFIC HEAT OF THE PHOSPHORUS-DOPED SILICONFERREIRA DA SILVA A; KISHORE R; DA CUNHA LIMA IC et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 8; PP. 4035-4043; BIBL. 22 REF.Article

SELF-CONSISTENT APW-K.P METHOD. II: APPLICATION TO NACLDA CUNHA LIMA IC; FERREIRA DA SILVA A; PARADA NJ et al.1981; INT. J. QUANTUM CHEM.; ISSN 0020-7608; USA; DA. 1981; VOL. 20; NO 4; PP. 933-949; BIBL. 25 REF.Article

A MIXED BONDING BAND STRUCTURE CALCULATION FOR GAAS AND ALAS USING THE APW-K-P METHODFERREIRA DA SILVA A; DA CUNHA LIMA IC; PARADA NJ et al.1981; J. PHYS. CHEM. SOLIDS; ISSN 0022-3697; USA; DA. 1981; VOL. 42; NO 4; PP. 291-296; BIBL. 22 REF.Article

Spin susceptibility and effective mass in shallow doubly doped semiconductor systemsFERREIRA DA SILVA, A.Physical review. B, Condensed matter. 1991, Vol 43, Num 8, pp 6551-6553, issn 0163-1829, 3 p.Article

Enhanced spin susceptibility in phosphorus-doped siliconFERREIRA DA SILVA, A.Physical review. B, Condensed matter. 1988, Vol 38, Num 14, pp 10055-10056, issn 0163-1829Article

MODIFIED MOTT-HUBBARD-ANDERSON MODEL RESULTS OF AN UNRESTRICTED HARTREE-FOCK PSEUDOCLUSTER CALCULATIONRIKLUND R; FERREIRA DA SILVA A; CHAO KA et al.1980; PHILOS. MAG., B; ISSN 0141-8637; GBR; DA. 1980; VOL. 42; NO 6; PP. 755-761; BIBL. 17 REF.Article

A COMPUTER STUDY ON THE METAL-NONMETAL TRANSITIONS IN HEAVILY DOPED SEMICONDUCTORSCHAO KA; FERREIRA DA SILVA A; RIKLUND R et al.1982; PROGRESS OF THEORETICAL PHYSICS. SUPPLEMENT; ISSN 0375-9687; JPN; DA. 1982; NO 72; PP. 181-205; BIBL. 44 REF.Article

SELF-CONSISTENT APW-K.P METHOD. I: THEORYDA CUNHA LIMA IC; FERREIRA DA SILVA A; PARADA NJ et al.1981; INT. J. QUANTUM CHEM.; ISSN 0020-7608; USA; DA. 1981; VOL. 19; NO 4; PP. 681-691; BIBL. 15 REF.Article

CLUSTER MODEL OF IMPURITY STATES IN DOPED SEMICONDUCTORSFERREIRA DA SILVA A; RIKLUND R; CHAO KA et al.1979; PROGR. THEOR. PHYS.; JPN; DA. 1979; VOL. 62; NO 3; PP. 584-594; BIBL. 14 REF.Article

ROLES OF THE LOWER AND THE UPPER HUBBARD BANDS AND THE DONOR-EXCITONIC STATES IN THE THEORY OF SHALLOW-IMPURITY STATES IN DOPED SEMICONDUCTORSCHAO KA; RIKLUND R; FERREIRA DA SILVA A et al.1980; PHYS. REV. B; USA; DA. 1980; VOL. 21; NO 12; PP. 5745-5748; BIBL. 15 REF.Article

Bandwidth narrowing in n-type many valley semiconductors. II. Self-consistent many-body and unrestricted Hartree-Fock cluster approachesFABBRI, M; FERREIRA DA SILVA, A.Journal of non-crystalline solids. 1985, Vol 70, Num 1, pp 143-155, issn 0022-3093Article

Computation of regime channel characteristics on thermodynamic basisYALIN, M. S; FERREIRA DA SILVA, A. M.Journal of Hydraulic Research. 2000, Vol 38, Num 1, pp 57-63, issn 0022-1686Article

Effect of three-donor cluster on infrared absorption of semiconductor systemsFERREIRA DA SILVA, A; CANUTO, S.Solid state communications. 1990, Vol 75, Num 11, pp 939-941, issn 0038-1098, 3 p.Article

A method to estimate the self-consistency effects on electronic structure calculationsGUIMARAES, P. S; FERREIRA DA SILVA, A.Solid state communications. 1985, Vol 56, Num 2, pp 185-186, issn 0038-1098Article

Impurity density of states in n-type Si inversion layersHIPOLITO, O; FERREIRA DA SILVA, A.Physical review. B, Condensed matter. 1993, Vol 47, Num 16, pp 10918-10919, issn 0163-1829Article

On the initiation of bed deformation of a meandering streamYALIN, M. S; FERREIRA DA SILVA, A. M.Euromech Colloquium. 1993, pp 202-205Conference Paper